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| Advance Product Information 2 -20 GHz Wideband AGC Amplifier TGA1342-EPU Key Features and Performance * * * * * * 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA Dimensions 3.378mm x 2.032mm Primary Applications * * Typical Electrical Characteristics S21 Gain (dB) VD=5v Id=60ma Temp=25C 12.0 Gain (dB) 10.0 8.0 6.0 4.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Input Return Loss (dB) 0.0 -10.0 -20.0 -30.0 -40.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) S11 Input Return Loss (dB) VD=5v Id=60ma Temp=25C Wideband Gain Block Amplifier Wideband Low Noise Amplifier Noise Figure (dB) VD=6v Id=60ma Temp=25C Output Return Loss (dB) 6.0 5.0 4.0 3.0 2.0 1.0 2 4 6 8 10 12 14 16 18 Frequency (GHz) 0.0 -10.0 -20.0 -30.0 -40.0 2 S22 Output Return Loss (dB) VD=5v Id=60ma Temp=25C Noise Figure (dBf) 4 6 8 10 12 14 16 18 20 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 rev 11/10/98 Advance Product Information Mechanical Characteristics Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 rev 11/10/98 Advance Product Information Chip Assembly and Bonding Diagram TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 rev 11/10/98 Advance Product Information Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 rev 11/10/98 |
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